NVD5806N MOSFET Transistor

The NVD5806N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5806N transistor as follows.

NVD5806N Transistor Specification

Transistor Code		NVD5806N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		5806N
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		93.7nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		17nC

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