NVD5802N MOSFET Transistor

The NVD5802N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5802N transistor as follows.

NVD5802N Transistor Specification

Transistor Code		NVD5802N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		5802N
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	101A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0044Ohm
Power Dissipation (Maximum)	PD	93.75W
Drain-Source Capacitance		850pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		52nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		75nC

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