NVD4856N MOSFET Transistor

The NVD4856N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD4856N transistor as follows.

NVD4856N Transistor Specification

Transistor Code		NVD4856N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		4856N
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	89A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0047Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		567pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22.5nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		18nC

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