NVD4808N MOSFET Transistor

The NVD4808N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD4808N transistor as follows.

NVD4808N Transistor Specification

Transistor Code		NVD4808N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		4808N
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	63A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	54.6W
Drain-Source Capacitance		334pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		21.3nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		11.3nC

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