NVB6413AN MOSFET Transistor

The NVB6413AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVB6413AN transistor as follows.

NVB6413AN Transistor Specification

Transistor Code		NVB6413AN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		6413AN
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	136W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		84nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		51nC

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