NVB6411AN MOSFET Transistor

The NVB6411AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVB6411AN transistor as follows.

NVB6411AN Transistor Specification

Transistor Code		NVB6411AN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		6411AN
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	77A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	217W
Drain-Source Capacitance		550pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		144nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		100nC

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