NVB6410AN MOSFET Transistor

The NVB6410AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVB6410AN transistor as follows.

NVB6410AN Transistor Specification

Transistor Code		NVB6410AN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		6410AN
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	76A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	188W
Drain-Source Capacitance		650pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		120nC

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