NVB5860NL MOSFET Transistor

The NVB5860NL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVB5860NL transistor as follows.

NVB5860NL Transistor Specification

Transistor Code		NVB5860NL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	220A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.003Ohm
Power Dissipation (Maximum)	PD	283W
Drain-Source Capacitance		1127pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		220nC

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