NVB5404N MOSFET Transistor

The NVB5404N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVB5404N transistor as follows.

NVB5404N Transistor Specification

Transistor Code		NVB5404N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	167A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	254W
Drain-Source Capacitance		1075pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		65nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		125nC

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