NVB25P06 MOSFET Transistor

The NVB25P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVB25P06 transistor as follows.

NVB25P06 Transistor Specification

Transistor Code		NVB25P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	27.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		345pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		72nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		33nC

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