NUS5530MNR2G MOSFET Transistor

The NUS5530MNR2G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NUS5530MNR2G transistor as follows.

NUS5530MNR2G Transistor Specification

Transistor Code		NUS5530MNR2G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN8
Transistor SMD Code		5530
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		9.7nC

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