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NTMS10P02R2 MOSFET Transistor

The NTMS10P02R2 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTMS10P02R2 transistor as follows.

Circuit diagram symbol of the NTMS10P02R2 transistor

NTMS10P02R2 Transistor Specification

Transistor Code NTMS10P02R2
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOP8
Transistor SMD Code 10P02
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 1100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 70nC

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