NTMS10P02 MOSFET Transistor

The NTMS10P02 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTMS10P02 transistor as follows.

NTMS10P02 Transistor Specification

Transistor Code		NTMS10P02
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	2.5W
Total Gate Charge		48nC

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