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NTLGD3502N MOSFET Transistor

The NTLGD3502N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTLGD3502N transistor as follows.

Circuit diagram symbol of the NTLGD3502N transistor

NTLGD3502N Transistor Specification

Transistor Code NTLGD3502N
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 1.74W

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