The NTJD1155L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the NTJD1155L transistor as follows.
| Transistor Code | NTJD1155L | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | P-Channel | |
| Package | SC88_SC70_SOT363 | |
| Drain-Source Voltage (Maximum) | VDS | 8V |
| Gate-Source Voltage (Maximum) | VGS | 8V |
| Drain Current (Maximum) | ID | 1.3A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.13Ohm |
| Power Dissipation (Maximum) | PD | 0.4W |
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