NTGD1100L MOSFET Transistor

The NTGD1100L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTGD1100L transistor as follows.

NTGD1100L Transistor Specification

Transistor Code		NTGD1100L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	0.83W

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