NTD5862N MOSFET Transistor

The NTD5862N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTD5862N transistor as follows.

NTD5862N Transistor Specification

Transistor Code		NTD5862N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_IPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0057Ohm
Power Dissipation (Maximum)	PD	96W
Total Gate Charge		82nC

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