NTD5806N MOSFET Transistor

The NTD5806N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTD5806N transistor as follows.

NTD5806N Transistor Specification

Transistor Code		NTD5806N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	2.5V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	39W
Total Gate Charge		17nC

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