NTD5802N MOSFET Transistor

The NTD5802N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTD5802N transistor as follows.

NTD5802N Transistor Specification

Transistor Code		NTD5802N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	101A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0044Ohm
Power Dissipation (Maximum)	PD	93.75W
Total Gate Charge		75nC

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