NTD4856N MOSFET Transistor

The NTD4856N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTD4856N transistor as follows.

NTD4856N Transistor Specification

Transistor Code		NTD4856N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	89A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0047Ohm
Power Dissipation (Maximum)	PD	60W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		18nC

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