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NTD4809N MOSFET Transistor

The NTD4809N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTD4809N transistor as follows.

Circuit diagram symbol of the NTD4809N transistor

NTD4809N Transistor Specification

Transistor Code NTD4809N
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK_IPAK
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 58A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 52W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 25nC

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