NTB6412AN MOSFET Transistor

The NTB6412AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTB6412AN transistor as follows.

NTB6412AN Transistor Specification

Transistor Code		NTB6412AN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	58A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0182Ohm
Power Dissipation (Maximum)	PD	167W
Total Gate Charge		73nC

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