NTB5605P MOSFET Transistor

The NTB5605P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTB5605P transistor as follows.

NTB5605P Transistor Specification

Transistor Code		NTB5605P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	88W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		13nC

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