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NDT1N70 MOSFET Transistor

The NDT1N70 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDT1N70 transistor as follows.

Circuit diagram symbol of the NDT1N70 transistor

NDT1N70 Transistor Specification

Transistor Code NDT1N70
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 9.3Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 20pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

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