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NDP6030PL MOSFET Transistor

The NDP6030PL is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDP6030PL transistor as follows.

Circuit diagram symbol of the NDP6030PL transistor

NDP6030PL Transistor Specification

Transistor Code NDP6030PL
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.025Ohm
Power Dissipation (Maximum) PD 75W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 36nC

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