NDH8502P MOSFET Transistor

The NDH8502P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDH8502P transistor as follows.

NDH8502P Transistor Specification

Transistor Code		NDH8502P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SUPERSOT8
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	0.8W
Operating Junction Temperature (Maximum)		150°C

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