NDH8302P MOSFET Transistor

The NDH8302P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDH8302P transistor as follows.

NDH8302P Transistor Specification

Transistor Code		NDH8302P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SUPERSOT8
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	0.8W
Operating Junction Temperature (Maximum)		150°C

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