NDD04N60Z MOSFET Transistor

The NDD04N60Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDD04N60Z transistor as follows.

NDD04N60Z Transistor Specification

Transistor Code		NDD04N60Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_IPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	83W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		19nC

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