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NDD03N60Z MOSFET Transistor

The NDD03N60Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDD03N60Z transistor as follows.

Circuit diagram symbol of the NDD03N60Z transistor

NDD03N60Z Transistor Specification

Transistor Code NDD03N60Z
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK_IPAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.3Ohm
Power Dissipation (Maximum) PD 61W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 12nC

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