NDB5060 MOSFET Transistor

The NDB5060 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDB5060 transistor as follows.

NDB5060 Transistor Specification

Transistor Code		NDB5060
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	68W
Operating Junction Temperature (Maximum)		150°C

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