MXP65D7AT MOSFET Transistor

The MXP65D7AT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MXP65D7AT transistor as follows.

MXP65D7AT Transistor Specification

Transistor Code		MXP65D7AT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	142A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0057Ohm
Power Dissipation (Maximum)	PD	231W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		50nS

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