MXP6006DF MOSFET Transistor

The MXP6006DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MXP6006DF transistor as follows.

MXP6006DF Transistor Specification

Transistor Code		MXP6006DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	115A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	158W
Drain-Source Capacitance		534pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		43nS

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