MXP1006AT MOSFET Transistor

The MXP1006AT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MXP1006AT transistor as follows.

MXP1006AT Transistor Specification

Transistor Code		MXP1006AT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	155A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	333W
Drain-Source Capacitance		425pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		155nS

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