MTP658G6 MOSFET Transistor

The MTP658G6 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP658G6 transistor as follows.

MTP658G6 Transistor Specification

Transistor Code		MTP658G6
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.039Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS

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