MTP5614N6 MOSFET Transistor

The MTP5614N6 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP5614N6 transistor as follows.

MTP5614N6 Transistor Specification

Transistor Code		MTP5614N6
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-26
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.072Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		48pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS

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