MTP5210F3 MOSFET Transistor

The MTP5210F3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP5210F3 transistor as follows.

MTP5210F3 Transistor Specification

Transistor Code		MTP5210F3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.037Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		234pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Total Gate Charge		148nC

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