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MTP2P50E MOSFET Transistor

The MTP2P50E is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP2P50E transistor as follows.

Circuit diagram symbol of the MTP2P50E transistor

MTP2P50E Transistor Specification

Transistor Code MTP2P50E
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO2203
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.5Ohm
Power Dissipation (Maximum) PD 75W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 19nC

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