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MTP2611V8 MOSFET Transistor

The MTP2611V8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP2611V8 transistor as follows.

Circuit diagram symbol of the MTP2611V8 transistor

MTP2611V8 Transistor Specification

Transistor Code MTP2611V8
Transistor Type MOSFET
Control Channel Type P-Channel
Package DFN3X3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 45A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0088Ohm
Power Dissipation (Maximum) PD 31W
Drain-Source Capacitance 415pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 23nS
Total Gate Charge 44nC

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