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MTP2603G6 MOSFET Transistor

The MTP2603G6 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP2603G6 transistor as follows.

Circuit diagram symbol of the MTP2603G6 transistor

MTP2603G6 Transistor Specification

Transistor Code MTP2603G6
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSOP-6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.035Ohm
Power Dissipation (Maximum) PD 1.6W
Drain-Source Capacitance 92pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS

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