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MTP2317N3 MOSFET Transistor

The MTP2317N3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP2317N3 transistor as follows.

Circuit diagram symbol of the MTP2317N3 transistor

MTP2317N3 Transistor Specification

Transistor Code MTP2317N3
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.028Ohm
Power Dissipation (Maximum) PD 1.38W
Drain-Source Capacitance 159pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS

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