MTP2010J3 MOSFET Transistor

The MTP2010J3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP2010J3 transistor as follows.

MTP2010J3 Transistor Specification

Transistor Code		MTP2010J3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.086Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		91pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS

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