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MTN6680Q8 MOSFET Transistor

The MTN6680Q8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN6680Q8 transistor as follows.

Circuit diagram symbol of the MTN6680Q8 transistor

MTN6680Q8 Transistor Specification

Transistor Code MTN6680Q8
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.011Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 285pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.3nS

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