MTN50N06E3 MOSFET Transistor

The MTN50N06E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN50N06E3 transistor as follows.

MTN50N06E3 Transistor Specification

Transistor Code		MTN50N06E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		364pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58nS

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