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MTN4N65I3 MOSFET Transistor

The MTN4N65I3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN4N65I3 transistor as follows.

Circuit diagram symbol of the MTN4N65I3 transistor

MTN4N65I3 Transistor Specification

Transistor Code MTN4N65I3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 48W
Drain-Source Capacitance 51pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 33nS

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