MTN2510LE3 MOSFET Transistor

The MTN2510LE3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN2510LE3 transistor as follows.

MTN2510LE3 Transistor Specification

Transistor Code		MTN2510LE3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	155W
Drain-Source Capacitance		224pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		200nS
Total Gate Charge		45nC

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