MTN2510H8 MOSFET Transistor

The MTN2510H8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN2510H8 transistor as follows.

MTN2510H8 Transistor Specification

Transistor Code		MTN2510H8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		236pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		26nS

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