MTN2310V8 MOSFET Transistor

The MTN2310V8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN2310V8 transistor as follows.

MTN2310V8 Transistor Specification

Transistor Code		MTN2310V8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.031Ohm
Power Dissipation (Maximum)	PD	14W
Drain-Source Capacitance		43pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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