MTN1308E3 MOSFET Transistor

The MTN1308E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN1308E3 transistor as follows.

MTN1308E3 Transistor Specification

Transistor Code		MTN1308E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		200nS
Total Gate Charge		42nC

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