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MTN1308E3 MOSFET Transistor

The MTN1308E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN1308E3 transistor as follows.

Circuit diagram symbol of the MTN1308E3 transistor

MTN1308E3 Transistor Specification

Transistor Code MTN1308E3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0105Ohm
Power Dissipation (Maximum) PD 230W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 200nS
Total Gate Charge 42nC

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