MTEH0N25J3 MOSFET Transistor

The MTEH0N25J3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTEH0N25J3 transistor as follows.

MTEH0N25J3 Transistor Specification

Transistor Code		MTEH0N25J3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.72Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		26pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16nS

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