MTEF1P15N6 MOSFET Transistor

The MTEF1P15N6 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTEF1P15N6 transistor as follows.

MTEF1P15N6 Transistor Specification

Transistor Code		MTEF1P15N6
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-26
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.661Ohm
Power Dissipation (Maximum)	PD	3.2W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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